Late News Abstract Submission Opens May 17, 2023 |  Closes June 5, 2023
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Technical Program

Ultra-wide bandgap materials have emerged as a potential route towards next generation power and RF devices with superior performance compared to conventional semiconductors such as Si, GaAs, SiC or GaN.  Many of the figure-of-merits for predictive device performance scale non-linearly with increasing critical electric field which is directly related to increasing bandgap and show great promise for these materials. Gallium oxide (Ga2O3) is an UWBG material of particular interest due to the availability of high-quality, relatively inexpensive, large-area native substrates with a wide range of doping required for various applications. Despite tremendous advances in materials, device, and thermal management, there are many outstanding technical challenges that must be addressed in order to realize the full potential of Ga2O3.  These include but are not limited to: epitaxial material quality and reductions of native defects; bulk substrate growth; advanced device scaling and fabrication processes; heterojunctions; thermal management; electrical and thermal co-design; and benchmarking circuit performance.

After a highly successful and widely attended in person conference at Washington DC in August 2022, the 6th U.S. Workshop on Gallium Oxide (GOX 2023) will be held in the University at Buffalo Campus, Buffalo, New York on August 13-16, 2023. In this rapidly advancing field, this workshop provides a premier platform for reporting recent advances in materials, device and circuit development and identify major scientific gaps. The intent is to create actionable coordination across government, industry and academia to enable rapid transitional technologies in this field.  There will be no written proceedings to facilitate a friendly and stimulating environment for scientific discussions among participants from domestic and international Ga2O3 research groups.  Attendees can expect topics including, but not limited to: bulk and epitaxial growth, theory/modeling/simulations, device and circuit advancements, materials characterization and novel properties, thermal management, electro-thermal co-design and heterostructures.

GOX 2023 will consist of two and a half days of presentations by invited and contributed speakers, as well as two evening poster sessions where the latest Ga2O3 results can be discussed. The Workshop will be preceded by a welcome reception beneficial for networking with others in the field and establishing new collaborations.

We hope that attendees will have time to explore all that the Buffalo-Niagara region and Southern Ontario (Canada) has to offer in terms of history and local attractions.

How to View the Technical Program

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Plenary Speakers

  • Kelson Chabak (Air Force Research Laboratory, USA)
  • Zbigniew Galazka (IKZ, Germany)
  • Akito Kuramata (Novel Crystals Technology, Japan)

Invited Speakers

  • Nasim Alem (Pennsylvania State University, USA)
  • Elif Ertekin (University of Illinois, Urbana-Champaign, USA)
  • Debdeep Jena (Cornell University, USA)
  • Martin Kuball (University of Bristol, UK)
  • Andrei Osinsky (Agnitron, USA)
  • Kohei Sasaki (Novel Crystals Technology, Japan)
  • Mathias Schubert (University of Nebraska, USA)
  • Yuhao Zhang (Virginia Tech. USA)

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Key Dates

Abstract Submission Deadline:
April 12, 2023

Author Acceptance Notifications:
May 17, 2023

Late News Abstract Deadline:
Opens May 17, 2023 |  Closes June 5, 2023

Early Registration Deadline:
June 30, 2023

Hotel Reservation Deadline:
August 1, 2023

Downloads

  • Copyright Agreement (PDF)
  • Health & Safety Plan (PDF)
  • Presentation Guidelines
  • Lunch & Dinner Options (PDF)
  • Schedule of Events (PDF)
  • Shuttle Service Schedule (PDF)
  • Sponsor Form (PDF)
  • Technical Program (PDF)

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Della Miller

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(530) 896-0477
della@avs.org

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